Comparative Study of Device Performance and Reliability in Amorphous InGaZnO Thin-Film Transistors with Various High-k Gate Dielectrics

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概要

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• A comparative study of the electrical characteristics and device instabilities in InGaZnO thin-film transistors (IGZO-TFTs) with four different high-k gate dielectrics (Al<inf>2</inf>O<inf>3</inf>, HfO<inf>2</inf>, Ta<inf>2</inf>O<inf>5</inf>, and ZrO<inf>2</inf>) has been conducted. High-k gate dielectrics have a sufficiently low leakage current for the gate insulator of IGZO-TFTs and ZrO<inf>2</inf>has the highest dielectric constant, followed by Ta<inf>2</inf>O<inf>5</inf>, HfO<inf>2</inf>, and Al<inf>2</inf>O<inf>3</inf>. However, the charge trapping in high-k gate dielectrics induced the bias stress instability and degradation of IGZO-TFTs over time. In particular, the positive bias stress (PBS) and positive bias temperature stress (PBTS) caused a large positive threshold voltage (V_{\text{th}}) variation due to electron trapping, while the negative bias stress (NBS) and negative bias temperature stress (NBTS) brought about a much smaller V_{\text{th}} shift. In particular, the Al<inf>2</inf>O<inf>3</inf>and HfO<inf>2</inf>gate insulators have significant threshold voltage shifts for the PBS and PBTS measurements. Among the four different high-k gate dielectrics, ZrO<inf>2</inf>is the most promising high-k gate dielectric for the IGZO-TFTs because of its high dielectric constant, low subthreshold swing, high mobility, large drive current, small hysteresis, and high on/off current ratio.

• 2013-06-25

著者

• Cho Won-ju

  Department Of Electronic Material Engineering Kwangwoon University

• Lee In-kyu

  Department Of Endocrinology And Metabolism Kyungpook National University Hospital

• Lee Se-won

  Department Of Dermatology And Institute Of Hair And Cosmetic Medicine Yonsei University Wonju Colleg

• Gu Ja-gyeong

  Department Of Food Science And Biotechnology Of Animal Resources Konkuk University

• Kim Kwan-Su

  Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea

• Kim Kwan-Su

  Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea

• Lee In-Kyu

  Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea

• Gu Ja-gyeong

  Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea

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