Fabrication of High Performance Ion-Sensitive Field-Effect Transistors Using an Engineered Sensing Membrane for Bio-Sensor Application

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概要

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• We propose a SiO2/HfO2/Al2O3 (OHA)-engineered sensing membrane fabricated by stacking high-k materials in order to improve the electrical and chemical stability of ion-sensitive field effect transistors (ISFETs). The sensing properties of the OHA layer were compared with SiO2/HfO2 (OH) and SiO2/Al2O3 (OA) layers. As a result, the OHA layer revealed a high on/off current ratio of 1.05 \times 10^{10}, a low subthreshold swing of 62 mV/dec as gate insulator of the metal--oxide--semiconductor field-effect transistors (MOSFETs) and an excellent pH sensitivity of 57.1 mV/pH, a small drift rate of 0.23 mV/h and a low hysteresis voltage of 1.85 mV as the sensing membrane of the ISFET pH sensors. These improvements could be explained by the rigid band structure of the tri-stacked engineered sensing layer. Consequently, the OHA sensing membrane looks promising for bio-sensor application with improved signal-to-noise ratio.

• 2012-02-25

著者

• Cho Won-ju

  Department Of Electronic Material Engineering Kwangwoon University

• Jang Hyun-June

  Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea

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