Charge Trapping Characteristics of Variable Oxide Thickness Tunnel Barrier with SiO2/HfO2 or Al2O3/HfO2 Stacks for Nonvolatile Memories

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概要

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• Charge trapping characteristics of asymmetrical tunnel barriers consisting of different dielectric materials were investigated for application of nonvolatile memory devices. A thin HfO2 layer stacked on ultrathin SiO2 layer (SiO2/HfO2 tunnel barrier) revealed higher current sensitivity to applied gate voltage than the conventional single SiO2 tunnel barrier. On the other hand, the electron trapping of the tunnel barriers increased with the thickness of HfO2 layer. Thus, a thin HfO2 layer is promising for the engineered tunnel barriers, while a thick HfO2 layer is appropriate for charge trapping layers for high-integrated nonvolatile memories. Meanwhile, an ultrathin Al2O3/HfO2 tunnel barrier also revealed good electrical characteristics and is suitable for low temperature fabrication process.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-06-25

著者

• Cho Won-ju

  Department Of Electronic Material Engineering Kwangwoon University

• Jung Jongwan

  Department Of Nano Science And Technology Sejong University

• Jung Myung-Ho

  Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea

• Jung Jongwan

  Department of nano-science and technology, Sejong University, 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Korea

• Kim Kwan-Su

  Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea

• Park Goon-Ho

  Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea

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