Fabrication of n- and p-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods

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概要

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• Schottky barrier thin-film transistors (SB-TFT) based on polycrystalline silicon (poly-Si) films crystallized by solid phase crystallization (SPC) and excimer laser annealing (ELA) methods were fabricated for system-on-glass (SOG) application. The structure of poly-Si films by ELA and SPC methods was analyzed. The formations of platinum silicide and erbium silicide were developed for p- and n-channel metallic junctions, respectively. The fabricated SB-TFTs have a large on/off current ratio with a low leakage current. The effects of forming gas annealing (FGA) in 2% H2/N2 gas ambient were evaluated. As a result of FGA, significant improvements of electrical characteristics were obtained due to reduction of trap states.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Choi Chel-jong

  Department Of Bin Fusion Technology Chonbuk National University

• Cho Won-ju

  Department Of Electronic Material Engineering Kwangwoon University

• Shin Jin-wook

  Department Of Chemistry Mcgill University

• Cho Won-Ju

  Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea

• Jang Moongyu

  U-terminal Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea

• Shin Jin-Wook

  Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea

• Choi Chel-Jong

  Department of Semiconductor Science and Technology Chonbuk University, Jeonju 561-756, Korea

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