Effects of a SiO_2 Capping Layer on the Electrical Properties and Morphology of Nickel Silicides

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-15

著者

• Lee Hi-deok

  Department Of Electronics Engineering Chungnam National University

• Choi Chel-jong

  Department Of Bin Fusion Technology Chonbuk National University

• Choi Chel-jong

  Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)

• Seong Tae-yeon

  Department Of Materials Science And Engineering And Centre For Electronic Materials Research Kwangju

• Ok Young-woo

  Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist)

関連論文

• Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
• Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
• Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation
• Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
• Thermally Stable and Low Resistance Ru Ohmic Contacts to n-ZnO : Semiconductors
• Low Resistance and Thermally Stable Pt/W/Au Ohmic Contacts to P-Type GaN
• High Quality Nonalloyed Pt Ohmic Contacts to P-Type GaN Using Various Surface Treatment
• Investigation into the Role of Low-Temperature GaN in n-GaN/InGaN/p-GaN Double-Heterostructure Light-Emitting Diodes
• Reduction of Threading Dislocations in InGaN/GaN Double Heterostructure through the Introduction of Low-Temperature GaN Intermediate Layer
• Atomic Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching
• Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering
• Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
• Formation of Natural InAlAs Vertical Superlattices
• Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes
• Characterisation of GaNP Layers Grown on (0001) GaN/Sapphire by Gas Source Molecular Beam Epitaxy
• Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga_In_As/Ga_xIn_As_yP_/Ga_In_P/GaAs Quantum Well Structure
• Electrical and Structural Properties of Ti/Au Ohmic Contacts on N-ZnO:Al
• Ordering and Associated Domain Structures in Zinc and Silicon Doped Ga_In_P and Ga_xInAs_yP_ Layers Grown on GaAs by Metalorganic Vapour Phase Epitaxy
• Effects of Fe Film Thickness and Pretreatments on the Growth Behaviours of Carbon Nanotubes on Fe-doped (001) Si Substrates
• Conduction Mechanism and Reliability Characteristics of a Metal--Insulator--Metal Capacitor with Single ZrO2 Layer
• Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications
• Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology
• Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
• Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering
• Improved output power of GaN-based vertical light emitting diodes fabricated with current blocking region formed by O2 plasma treatment
• Effect of nitrogen concentration on low-frequency noise and negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with nitrided gate oxide (Special issue: Dielectric thin films for future electron devices: s
• Effects of Te Doping on Ordering and Antiphase Boundaries in GaInP
• Effects of a SiO_2 Capping Layer on the Electrical Properties and Morphology of Nickel Silicides
• Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta_2O_5 Gate Stacks
• Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
• Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory
• Electrical Characteristic Analysis of Postannealed ZnO Thin-Film Transistors under O Ambient (Special Issue : Advanced Electromaterials)
• High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas
• Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor’s
• Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer
• Erratum: ``Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2''
• Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2
• Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
• Electrical Instabilities in Amorphous InGaZnO Thin Film Transistors with Si3N4 and Si3N4/Al2O3 Gate Dielectrics
• Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO_2 and S_3N_4 as Trapping Layer
• New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure
• Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device
• Novel Back End-of-Line Process Scheme for Improvement of Negative Bias Temperature Instability Lifetime
• Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer
• Modulated Structures and Atomic Ordering in InPySb1-y Layers Grown by Organometallic Vapor Phase Epitaxy
• Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device
• Fabrication of n- and p-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
• Ag/Ni/Ag Multilayer Reflector for GaN-Based Vertical Light-Emitting Diode
• Investigation of the Gate Bias Stress Instability in ZnO Thin Film Transistors by Low-Frequency Noise Analysis (Special Issue : Solid State Devices and Materials)
• Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
• Ag/Ni/Ag Multilayer Reflector for GaN-Based Vertical Light-Emitting Diode

もっと見る 閉じる

スポンサーリンク