Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer

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概要

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• In this paper, we fabricated a gate-all-around bandgap- engineered (BE) silicon-oxide-nitride-oxide-silicon (SONOS) and silicon-oxide-high-k-oxide-silicon (SOHOS) flash memory device with a vertical silicon pillar type structure for a potential solution to scaling down. Silicon nitride (Si3N4) and hafnium oxide (HfO2) were used as trapping layers in the SONOS and SOHOS devices, respectively. The BE-SOHOS device has better electrical characteristics such as a lower threshold voltage (VTH) of 0.16V, a higher gm.max of 0.593µA/V and on/off current ratio of 5.76×108, than the BE-SONOS device. The memory characteristics of the BE-SONOS device, such as program/erase speed (P/E speed), endurance, and data retention, were compared with those of the BE-SOHOS device. The measured data show that the BE-SONOS device has good memory characteristics, such as program speed and data retention. Compared with the BE-SONOS device, the erase speed is enhanced about five times in BE-SOHOS, while the program speed and data retention characteristic are slightly worse, which can be explained via the many interface traps between the trapping layer and the tunneling oxide.

著者

• Lee Hi-deok

  Department Of Electronics Engineering Chungnam National University

• Lee Ga-won

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• Jeong Kwang-seok

  Department Of Electronics Engineering Chungnam National University

• Yun Ho-jin

  Department Of Electronics Engineering Chungnam National University

• Oh Jae-sub

  Department Of Electronics Engineering Chungnam National University

• Kim Yu-mi

  Department Of Electronics Engineering Chungnam National University

• Yang Seung-dong

  Department Of Electronics Engineering Chungnam National University

• Lee Sang-youl

  Department Of Electronics Engineering Chungnam National University

• Jeong Kwang-Seok

  Department of Electronics Engineering, Chungnam National University

• OH Jae-Sub

  Department of Electronics Engineering, Chungnam National University

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