Yang Seung-dong | Department Of Electronics Engineering Chungnam National University

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概要

• YANG Seung-Dongの詳細を見る
• 同名の論文著者
• Department Of Electronics Engineering Chungnam National Universityの論文著者

関連著者

• Lee Hi-deok

  Department Of Electronics Engineering Chungnam National University

• Lee Ga-won

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• Jeong Kwang-seok

  Department Of Electronics Engineering Chungnam National University

• Yun Ho-jin

  Department Of Electronics Engineering Chungnam National University

• Kim Yu-mi

  Department Of Electronics Engineering Chungnam National University

• Yang Seung-dong

  Department Of Electronics Engineering Chungnam National University

• Lee Sang-youl

  Department Of Electronics Engineering Chungnam National University

• Oh Jae-sub

  Department Of Electronics Engineering Chungnam National University

• Kim Young-Su

  National Nanofab Center, Daejeon 305-806, Korea

• LEE Sang-Youl

  Department of Electronics Engineering, Chungnam National University

• Lee Hi-Deok

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Jeong Kwang-Seok

  Department of Electronics Engineering, Chungnam National University

• Jeong Kwang-Seok

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• OH Jae-Sub

  Department of Electronics Engineering, Chungnam National University

• Kim Yu-Mi

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Yang Seung-Dong

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

• Lee Sang-Youl

  Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea

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著作論文

• Electrical Characteristic Analysis of Postannealed ZnO Thin-Film Transistors under O Ambient (Special Issue : Advanced Electromaterials)
• Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer
• Electrical Instabilities in Amorphous InGaZnO Thin Film Transistors with Si3N4 and Si3N4/Al2O3 Gate Dielectrics
• Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO_2 and S_3N_4 as Trapping Layer
• Investigation of the Gate Bias Stress Instability in ZnO Thin Film Transistors by Low-Frequency Noise Analysis (Special Issue : Solid State Devices and Materials)

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