New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure
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概要
- 論文の詳細を見る
Ramping amplitude multi-frequency charge pumping technique is proposed to analyze the nitride traps in silicon–oxide–nitride–oxide–silicon (SONOS) structure. Based on the method, the trap density and the capture cross section at each location in oxide–nitride–oxide (ONO) gate stack can be extracted separately. The trap parameters extracted from the suggested model show that the traps located at tunnel-oxide/nitride interface whose capture cross section is lowest. The cause of large trap density at tunnel-oxide/nitride interface may be due to Si–Si bonding formation as reported in previous works.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Om Jae-Chul
Mobile & FLASH Division, Hynix Semiconductor Inc.
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Lee Seaung-Suk
Mobile & FLASH Division, Hynix Semiconductor Inc.
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Bae Gi-Hyun
Mobile & FLASH Division, Hynix Semiconductor Inc.
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Lee Hi-deok
Department Of Electronics Engineering Chungnam National University
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Lee Ga-won
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Han In-shik
Department Of Electronics Engineering Chungnam National University
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Choi Won-Ho
Department of Physiology and Anesthesiology, College of Medicine, Institute of Biomedical Science and Technology, Konkuk University
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Na Min-Ki
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea
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Park Sung-Soo
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea
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Lee Hi-Deok
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea
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Choi Won-Ho
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea
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Lee Seaung-Suk
Mobile and FLASH Division, Hynix Semiconductor Inc., Icheon, Kyoungki 467-701, Republic of Korea
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Bae Gi-Hyun
Mobile and FLASH Division, Hynix Semiconductor Inc., Icheon, Kyoungki 467-701, Republic of Korea
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Lee Ga-Won
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea
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Om Jae-Chul
Mobile and FLASH Division, Hynix Semiconductor Inc., Icheon, Kyoungki 467-701, Republic of Korea
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Han In-Shik
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea
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Choi Won-Ho
Department of Computer Engineering, University of Kyungnam
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