Analysis of Si-SiO_2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-15
著者
-
Om Jae-Chul
Mobile & FLASH Division, Hynix Semiconductor Inc.
-
Bae Gi-Hyun
Mobile & FLASH Division, Hynix Semiconductor Inc.
-
Bae Gi-hyun
Mobile And Flash Division Hynix Semiconductor Inc.
-
Om Jae-chul
Mobile And Flash Division Hynix Semiconductor Inc.
-
Kim Se-jun
Mobile And Flash Division Hynix Semiconductor Inc.
-
KIM Nam-Kyeong
Mobile and FLASH Division, Hynix Semiconductor Inc.
-
PARK Kyoung-Hwan
Mobile and FLASH Division, Hynix Semiconductor Inc.
-
CHOI Eun-Seok
Mobile and FLASH Division, Hynix Semiconductor Inc.
-
LEE Min-Kyu
Mobile and FLASH Division, Hynix Semiconductor Inc.
-
KIM Hyeon-Soo
Memory R&D Division, Hynix Semiconductor Inc.
-
NOH Keum-Hwan
Mobile and FLASH Division, Hynix Semiconductor Inc.
-
LEE Hee-Kee
Mobile and FLASH Division, Hynix Semiconductor Inc.
-
Park Kyoung-hwan
Mobile And Flash Division Hynix Semiconductor Inc.
-
Noh Keum-hwan
Mobile And Flash Division Hynix Semiconductor Inc.
-
Kim Nam-kyeong
Mobile And Flash Division Hynix Semiconductor Inc.
-
Lee Hee-kee
Mobile And Flash Division Hynix Semiconductor Inc.
-
Choi Eun-seok
Mobile And Flash Division Hynix Semiconductor Inc.
関連論文
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors
- Analysis of Si-SiO_2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
- Analysis of Si-SiO2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
- Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory
- Analysis of Si–SiO2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
- New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure
- Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory