Bae Gi-Hyun | Mobile & FLASH Division, Hynix Semiconductor Inc.

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著作論文

Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Temperature effects on silicon-oxide-nitride-oxide-silicon transistors under channel hot electron injection operation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors
Analysis of Si-SiO_2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
Analysis of Si–SiO2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure
Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory

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