Analysis of Si-SiO2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Kim Se-jun

  Mobile And Flash Division Hynix Semiconductor Inc.

• Park Kyoung-hwan

  Mobile And Flash Division Hynix Semiconductor Inc.

• Kim Nam-kyeong

  Mobile And Flash Division Hynix Semiconductor Inc.

関連論文

• Analysis of Si-SiO_2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
• Analysis of Si-SiO2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
• Analysis of Si–SiO2 Interface Using Charge Pumping Method with Various Capping Materials between Gate Stacks and Inter Layer Dielectric in NAND Flash Memory
• Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory

スポンサーリンク