Substrate Resistance Effect on Charge-Pumping Current in Polycrystalline Silicon Thin Film Transistors
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概要
- 論文の詳細を見る
A model is proposed to explain the pulse transition time dependence of the charge-pumping current in polycrystalline silicon thin film transistors (poly-Si TFTs). When the gate pulse transition times are short, the charge-pumping current is increased abnormally due to the substrate resistance of poly-Si TFTs. The model is in good agreement with measured charge-pumping current, which enables accurate trap characterization.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-04-30
著者
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Lee Ga-won
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
-
Han Chul-hi
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Lee Jin-woo
Department Of Biomedical Engineering College Of Medicine Kyunghee University
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Han Chul-Hi
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology,
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Lee Ga-Won
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology,
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