Simultaneous and Accurate Formation of Variously Shaped Holes in Silicon Substrate
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概要
- 論文の詳細を見る
An electrochemical etching method for forming high-precision holes in silicon substrates is presented. An n-type layer is formed in the periphery of the hole pattern in order to define accurately current flow and a solution(1:2 HF:H_20) which does not chemically attack silicon is used. The silicon substrate is etched from the backside of the silicon wafer by means of a novel electrochemical etching method. Circular and square holes spaced 400 μm apart are formed simultaneously and accurately in a boron doped (100) silicon substrate. The circular and square holes are 400 μm in diameter and 400 μm on side, respectively. The combination of an n-type layer and electrochemical etching enables variously shaped holes which can be widely applied in silicon micromachining to be formed concurrently with high precision.
- 社団法人応用物理学会の論文
- 1997-05-01
著者
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Lee Hi-deok
Device Group Advanced Technology Laboratory Lg Semicon Co. Ltd.
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HAN Chul-Hi
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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Han Chul-hi
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Kim Jae-kwan
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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