New Fabrication Process of Single-Crystalline Silicon Islands Using Double Diffusion : Application to a Heating Resistor of a Thermal Inkjet Printhead

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概要

• 論文の詳細を見る

• The n^+-type silicon island was fabricated using double diffusion, selective anodization and oxidation of silicon. The island was applied as a heating resistor of a thermal inkjet printhead. The heating resistor has good uniformity of ± 5% and good endurance of 10^8 cycles under electrical stresses. In the inkjet printhead structure, high-quality thermal oxide can be used as a passivation layer and a thick thermal barrier oxide under heating resistors can be easily achieved. The diameter of ejected ink dots with a nozzle diameter of 35 μm was about 100 μm. There were no satellites on the paper.

• 社団法人応用物理学会の論文
• 1998-12-30

著者

• HAN Chul-Hi

  Department of Electrical Engineering, Korea Advanced Institute of Science and Technology

• Lee C‐s

  Genitech Co. Ltd. Daejon Kor

• Lee Ching-sung

  Department Of Electronic Engineering Feng Chia University

• Han Chul-hi

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• LEE Choon-Sup

  Department of Electrical Engineering, Korea Advanced Institute of Science and Technolngy

• LEE Jae-Duk

  Samsung Electronics Co. Ltd.

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