Endurance Characteristics and Degradation Mechanism of Polysilicon Thin Film Transistor EEPROMs with Electron Cyclotron Resonance N_2O-Plasma Gate Oxide

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-04-30

著者

• HAN Chul-Hi

  Department of Electrical Engineering, Korea Advanced Institute of Science and Technology

• Han C‐h

  Department Of Materials Engineering Hanyang University

• Lee J‐w

  Hanyang Univ. Seoul Kor

• Lee J‐w

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Lee J‐w

  Technology Development Semiconductor R&d Center Samsung Electronics Co.

• Lee Jin-woo

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• Lee Nae-in

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology:semiconducto

• Han C‐h

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• Han Chul-hi

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• Lee Jin-woo

  Department Of Dermatology Kosin University College Of Medicine

• Lee Jin-woo

  Department Of Biomedical Engineering College Of Medicine Kyunghee University

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