Effect of the Silicidation Reaction Condition on the Gate Oxide Integrity in Ti-polycide Gate
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
Ahn Sung
Advanced Technology Center Samsung Electronics Co. Ltd.
-
Lee Nae-in
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology:semiconducto
-
Lee N‐i
Korea Advanced Inst. Sci. And Technol. Taejon Kor
-
LEE Nae-In
Advanced Technology Center, Samsung Electronics Co. Ltd.
-
KIM Young-Wug
Advanced Technology Center, Samsung Electronics Co. Ltd.
-
Lee Nae-in
Advanced Process & Development Team System Lsi Division & 3technology & Development Team
-
Kim Young-wug
Advanced Technology Center Samsung Electronics Co. Ltd.
関連論文
- Effect of the Silicidation Reaction Condition on the Gate Oxide Integrity in Ti-polycide Gate
- Endurance Characteristics and Degradation Mechanism of Polysilicon Thin Film Transistor EEPROMs with Electron Cyclotron Resonance N_2O-Plasma Gate Oxide
- High-Performance EEPROMs Using N- and P-Channel Poly-Si TFTs with ECR N2O-Plasma Oxide
- Effect of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown Using Electron Cyclotron Resonence N_2O-Plasma
- Short Channel Effects in N- and P-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin Electron Cyclotron Resonance N_2O-Plasma Gate Dielectric
- Short-Channel Effects in N- and P-Channel Polysilicon Thin Film Transistors with Very Thin ECR N_2O-Plasma Gate Dielectrics
- Highly Reliable Interpoly Oxide Using ECR N_2O-Plasma for Next Generation Flash Memory
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor
- A Novel LOCal Oxidation of Silicon (LOCUS)-Type Isolation Technology Free of the Field Oxide Thinning Effect
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor