Application of Electron Cyclotron Resonance Plasma Thermal Oxidation to Bottom Gate Polysilicon Thin-Film Transistors
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概要
- 論文の詳細を見る
Electron cyclotron resonance (ECR) plasma thermal oxidation, as a bottom gate polysilicon thin-film transistors (poly-Si TFT's) gate oxidation process and as a passivation process for the back-side channel, has been investigated. ECR plasma thermal oxidation provides a smoother interface on doped poly-Si films than low-pressure chemical vapor deposition (LPCVD), which results in better electrical characteristics in bottom gate poly-Si TFT's. Bottom gate TFT's with ECR plasma thermal gate oxide show an electron mobility of 4.33 cm2/Vs, which is three times the electron mobility obtained when using LPCVD oxide. ECR plasma thermal oxidation of the back-side channel passivates the back-side interface, which also leads to improvements of the TFT's characteristics.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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HAN Jung-In
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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Han Chul-hi
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Kim Choong-ki
Department Of Electrical Engineering And Center For Electro-optics Korea Advanced Institute Of Scien
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Han Chul-Hi
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology,
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Kim Choong-Ki
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology,
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