Barrier Metal Properties of Amorphous Tantalum Nitride Thin Films between Platinum and Silicon deposited using Remote Plasma Metal Organic Chemical Vapor Method
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-05-01
著者
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Lee Moon
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team
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Lee M
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Cho Kwang-nam
Research Center For Electronic Materials And Components Department Of Electronic Engineering Hanyang
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Oh J‐e
Hanyang Univ. Ansan Kor
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Han C‐h
Department Of Materials Engineering Hanyang University
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Lee S‐i
Process Development Team Semiconductor R&d Center Samsung Electronics
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Park C‐s
Kwangju Inst. Sci. And Technol. (kjist) Gwangju Kor
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Park Chang-soo
Memory Business Division Samsung Electronics Inc.
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Lee Sang-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Ajou Univ. Suwon Kor
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Lee Sang-in
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang-in
Memory Business Division Samsung Electronics Inc.
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Lee Jong
Memory Business Division Samsung Electronics Inc.
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HAN Chang-Hee
Department of Materials Engineering, Hanyang University
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OH Jae-Eung
Research Center for Electronic Materials and Components, Department of Electronic Engineering, Hanya
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PAEK Su-Hyoun
Department of Materials Engineering, Hanyang University
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LEE Moon
Memory Business Division, Samsung Electronics, Inc.
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Oh Jae-eung
Division Of Mechanical Engineering Hanyang University
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OH Jae-Eung
Han Yang University
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Paek S‐h
Hanyang Univ. Seoul Kor
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Park C‐s
Electronics And Telecommunications Res. Inst. Taejeon Kor
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Han Chang-hee
Department Of Materials Engineering Hanbat National University
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Lee Soo
Process Development Team Semiconductor R&d Center Samsung Electronics
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Oh Jae-eung
Research Center For Electronic Materials And Components Department Of Electronic Engineering Hanyang
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Han C‐h
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Han Chang-Hee
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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