Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Lee S‐i
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Sang-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Ajou Univ. Suwon Kor
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Lee Sang-in
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang-in
Memory Business Division Samsung Electronics Inc.
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LEE Hyeon-Deok
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
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Oh Hyeok-sang
Process Development Team Semiconductor R&d Center Samsung Electronics
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LEE Soo
Process Development Team, Semiconductor R&D center, Samsung Electronics
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SHIN Hong-Jae
Process Development Team, Semiconductor R&D center, Samsung Electronics
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HONG Jin-Gi
Process Development Team, Semiconductor R&D center, Samsung Electronics
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KANG Hokyu
Process Development Team, Semiconductor R&D center, Samsung Electronics
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Hong Jin-gi
Process Development Team Semiconductor R&d Center Samsung Electronics
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Shin Hong-jae
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang H‐k
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kang Ho-kyu
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2
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Kang Ho-kyu
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Lee Soo
Process Development Team Semiconductor R&d Center Samsung Electronics
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Shin Hong-jae
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Hyeon-deok
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
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Lee Hyeon-deok
Process Development Team Semiconductor R&d Center Samsung Electronics
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