SHIN Hong-Jae | Process Development Team, Semiconductor R&D center, Samsung Electronics
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概要
関連著者
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SHIN Hong-Jae
Process Development Team, Semiconductor R&D center, Samsung Electronics
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Shin Hong-jae
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang H‐k
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kang Ho-kyu
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2
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Kang Ho-kyu
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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KANG Ho-Kyu
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
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Lee M‐y
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Lee M‐y
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Lee Myoung-bum
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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LEE Moon-Yong
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lee S‐i
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Moon-yong
Semiconductor R & D Center Samsung Electronics Co.ltd.
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Lee Sang-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Ajou Univ. Suwon Kor
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Lee Sang-in
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang-in
Memory Business Division Samsung Electronics Inc.
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LEE Hyeon-Deok
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
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Oh Hyeok-sang
Process Development Team Semiconductor R&d Center Samsung Electronics
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LEE Soo
Process Development Team, Semiconductor R&D center, Samsung Electronics
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HONG Jin-Gi
Process Development Team, Semiconductor R&D center, Samsung Electronics
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Hong Jin-gi
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Moon-yong
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Hee-Sook
Process Development, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Kim Byung-Jun
Process Development, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Lee Soo
Process Development Team Semiconductor R&d Center Samsung Electronics
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Park Hee-sook
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Byung-jun
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Shin Hong-jae
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Hyeon-deok
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Lee Hyeon-deok
Process Development Team Semiconductor R&d Center Samsung Electronics
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KIM Yun
Process Development Team, Semiconductor R&D center, Samsung Electronics
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LEE Seung
Process Development Team, Semiconductor R&D center, Samsung Electronics
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KIM Min
Process Development Team, Semiconductor R&D center, Samsung Electronics
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KIM Il-Goo
Process Development Team, Semiconductor R&D center, Samsung Electronics
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KIM Jae-Hak
Process Development Team, Semiconductor R&D center, Samsung Electronics
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KANG Hokyu
Process Development Team, Semiconductor R&D center, Samsung Electronics
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Kim M
Samsung Advanced Inst. Of Technol. Kyungki‐do Kor
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Kim Il-goo
Process Development Team Semiconductor R&d Center Samsung Electronics
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Kim Jae-hak
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Seung
Process Development Team Semiconductor R&d Center Samsung Electronics
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Kim Yun
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Soon
Process Development Team, Semiconductor R&D center, Samsung Electronics, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do 449-900, Korea
著作論文
- Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process
- Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process
- Integration of Hydrogen Silsesquioxane(HSQ) as an Intermetal Dielectric(IMD)Material for 0.35_ Technology
- Integration of Hydrogen Silsesquioxane (HSQ) as an Intermetal Dielectric (IMD) Material for 0.35μm Technology