Lee Myoung-bum | Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.

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著作論文

Electrical Properties of Crystalline Ta_2O_5 with Ru Electrode
Electrical Properties of Ru/Ta_2O_5/Ru Capacitor for 1 Giga-Scale DRAMs and Beyond
Effects of the Deposition Conditions of the Seed Layer on the Crystallinity and Electrical Characteristics of the Pb(Zr, Ti)O_3 Films
Effect of Activation of Oxygen by Electron Cyclotron Resonance Plasma on the Incorporation of Pb in the Deposition of Pb(Zr,Ti)O_3 Films by DC Magnetron Reactive Sputtering
Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films
The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application
The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application
Integration of Hydrogen Silsesquioxane(HSQ) as an Intermetal Dielectric(IMD)Material for 0.35_ Technology
Integration of Hydrogen Silsesquioxane (HSQ) as an Intermetal Dielectric (IMD) Material for 0.35μm Technology
W-Plug Common Contact with CoSi_2 Ohmic Layer for Scaled DRAM and Merged DRAM in Logic (MDL) Devices
Application of PECVD-WNx Electrode for Ta_2O_5 Capacitor
Application of PECVD-WNx Electrode for Ta_2O_5 Capacitor
Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric
The Origin of Micro-Loading Effect of TEOS-O3 Oxide II

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