Integration of Hydrogen Silsesquioxane (HSQ) as an Intermetal Dielectric (IMD) Material for 0.35μm Technology

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概要

• 論文の詳細を見る

• The integration issues of the application of HSQ as the non-etch back IMD of logic devices with W via plug were investigated.HSQ based IMD process could reduce the processing time of CMP by 33% compared to O3-TEOS USG based IMD with same global planarity.Degassing process at 550℃ was necessary to obtain the reliable via contact resistance with high temperature storage (HTS) test at 350℃ for 300 hours.Using HSQ in IMD, the parasitic capacitance decreased by 20% compared to that of O3-TEOS USG based IMD.The parasitic capacitance of HSQ was nearly the same as before and after thermal stressing at 350℃ for 300 hours.When HSQ was used as IMD material, the characteristics of transistor and time zero dielectric breakdown voltage(TZDB)exhibited equivalent to those of O3-TEOS USG based IMD.We could successfully integrate the 3-level metallization structure with HSQ in IMD for 0.35μm logic devices.

• 社団法人電子情報通信学会の論文
• 1998-07-24

著者

• Lee M‐y

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Lee M‐y

  Semiconductor R & D Center Samsung Electronics Co. Ltd.

• Lee Myoung-bum

  Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.

• KANG Ho-Kyu

  Process Development Team, Semiconductor R&D Division, Samsung Electronics Co.

• LEE Moon-Yong

  Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.

• Lee Moon-yong

  Semiconductor R & D Center Samsung Electronics Co.ltd.

• SHIN Hong-Jae

  Process Development Team, Semiconductor R&D center, Samsung Electronics

• Shin Hong-jae

  Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.

• Lee Moon-yong

  Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.

• Kang H‐k

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Kang Ho-kyu

  Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.

• Kang Ho-kyu

  Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2

• Kang Ho-kyu

  Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.

• Kang Ho-kyu

  Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.

• Park Hee-Sook

  Process Development, Semiconductor R&D Center, Samsung Electronics Co., LTD.

• Kim Byung-Jun

  Process Development, Semiconductor R&D Center, Samsung Electronics Co., LTD.

• Park Hee-sook

  Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.

• Kim Byung-jun

  Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.

• Kang Ho-kyu

  Process Development Team Semiconductor R&d Division Samsung Electronics Co.

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