Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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Lee M‐y
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Lee M‐y
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Lee Myoung-bum
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang-In
Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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Lee S‐i
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Moon-yong
Semiconductor R & D Center Samsung Electronics Co.ltd.
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Chung U‐i
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Chung U-in
Semiconductor R & D Center Samsung Electronics Co.ltd.
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Lee Sang-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Ajou Univ. Suwon Kor
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Lee Sang-in
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang-in
Memory Business Division Samsung Electronics Inc.
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Lee Sang-in
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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CHOI Ji
Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbu
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Choi Ji
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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Lee Moon-yong
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Lee Soo
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Soowong
Semiconductor R & D Center Samsung Electronics Co.ltd.
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Choi Ji
Semiconductor R & D Center Samsung Electronics Co.ltd.
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HWANG Byung
Semiconductor R & D Center, Samsung Electronics, Co.Ltd.
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FUJIHARA Kazuyuki
Semiconductor R & D Center, Samsung Electronics, Co.Ltd.
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Hwang Byung
Semiconductor R & D Center Samsung Electronics Co.ltd.
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Fujihara Kazuyuki
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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FUJIHARA Kazuyuki
Process Development Team Semiconductor R&D Division, Samsung Electronics Ltd.
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