Challenge to 0.13μm Device Patterning using KrF

概要

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The extension of optical lithography to sub-0.15μm design rule(D/R) using high NA KrF scanner and resolution enhancement technique(RET) is being considered because of the delayed ArF lithography technology, so that the development of 0.13μm device which has been accepted as the role of ArF or any post-KrF technologies will be a real challenge to most lithographers and even to the engineers of related technologies such as etch, thin film, CMP, etc.. In this paper, we discuss and predict the status and feasibility of 0.13μm device lithography with KrF refering to the theory and simulation, and then show some critical device patterns exposed with several KrF scanners which are currently available. Results of high NA scanners such as 0.68NA and 0.70NA available in the near future are also included and discussed. In the latter part of this paper, the most critical issues that can be predicted for 0.13μm device lithography are mentioned as requirements. We conclude that the challenge could be surmountable in the near future.
社団法人電子情報通信学会の論文
1999-07-23