Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition
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概要
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Post-deposition annealing was investigated for hafnium silicate films deposited on Si substrates by atomic layer deposition. Annealing in NH3 at 750°C incorporated 13 At.% nitrogen in hafnium silicate, and hysteresis significantly depended on film thickness. In contrast, annealing in N2 at 950°C suppressed hysteresis and its dependence on the film thickness. In addition, effective mobility and positive bias temperature instability were improved by N2 annealing of as-deposited hafnium silicate films. Finally, additional N2 annealing following NH3 annealing was effective to obtain highly dense hafnium silicate films with good mobility and optimized nitrogen incorporation.
- 2005-04-15
著者
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Moon Joo
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Chung U-in
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Cho Hag-ju
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
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Shin Yu
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Hong
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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LEE Hye
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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PARK Seong
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Jin Beom
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Jeon Taek
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Sang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Chung U-In
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyonggi-Do 449-711, Korea
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Cho Hag-Ju
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyonggi-Do 449-711, Korea
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Lee Hye
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyonggi-Do 449-711, Korea
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Park Seong
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyonggi-Do 449-711, Korea
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Jeon Taek
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyonggi-Do 449-711, Korea
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Moon Joo
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyonggi-Do 449-711, Korea
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Jin Beom
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyonggi-Do 449-711, Korea
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Kang Sang
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyonggi-Do 449-711, Korea
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Shin Yu
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd. San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyonggi-Do 449-711, Korea
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