Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Moon Joo-tae
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Lee Deok-hyung
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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CHUNG U-In
Process Development Thani, Semiconductor R&D Division, Sam suns Uectronics Co., Ltd.
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Lee Byeong-chan
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Choi Siyoung
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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Moon Joo-tae
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Chung U-in
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Kim Chul-sung
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Ku Ja-hum
Advanced Process Development Project System Lsi Division Samsung Electronics Co. Ltd.
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Yoo Jong-ryeol
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Lee Deok-hyung
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Lee Byeong-chan
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Choi Siyoung
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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