Most Efficient Alternative Manner of Patterning sub-80 nm Contact Holes and Trenches with 193 nm Lithography

概要

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The patterning of sub-80 nm contact holes and trenches by ArF lithography is very challenging. To solve this problem, several technologies have been proposed, including thermal flow, resolution enhancement of lithography assisted by chemical shrink (RELACS), and shrink assist film for enhanced resolution (SAFIER). In this paper, we compare these processes in order to determine the advantages and disadvantages, and to gain an understanding on their mechanism on the basis of the performances of each process. Thermal flow shows a strong advantage in terms of simplicity, but it shows several disadvantages in terms of layout dependence, mask error enhancement factor (MEEF), and process window. RELACS is proven to be the most reliable, since there is a small shrink amount dependence on layout and temperature, but the limitation of shrink amount is an obstacle. Finally, SAFIER shows strong advantages in low MEEF, wide process window, and enhanced uniformity, with a weakness of the deformation in asymmetric pattern. It is considered that such performances are strongly related to the mechanism of each process, and therefore, the process should be used according to its own performances and mechanism. On the basis of the properties and relationship with the mechanism, the appropriate applications are recommended for each process.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-06-15