Investigation of Chemical Vapor Deposition (CVD)-Derived Cobalt Silicidation for the Improvement of Contact Resistance
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概要
- 論文の詳細を見る
The improved contact resistance was obtained by the new barrier metal scheme such as CVD-Co/Ti/TiN process in the level of about half of that from CVD-Ti/TiN process. And the mechanism of contact silicidation of CVD-Co/Ti/TiN was investigated. Because Co silicide may prohibit the Si diffusion into Ti silicide and Si recess during TiCl4-based CVD-Ti process, and the inertness of Co silicide to the dopants, the improved contact resistance with uniform silicide morphology was obtained. Therefore, CVD-Co/Ti/TiN contact silicide process can be regarded as the next generation contact silicidation process.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Ryu Byung-il
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Moon Kwang-jin
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Hyun-su
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Sung-tae
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Moon Joo-tae
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Yun Jong-ho
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Chung U-in
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Kim Se-hoon
Cvd Division Comtecs Co. Ltd.
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Bae Nam-jin
Cvd Division Comtecs Co. Ltd.
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Choi Gil-heyun
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Sohn Woong-hee
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Jung Eun-ji
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Jung Sug-woo
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Chung U-In
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Kyungki-Do 449-900, Korea
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Kim Sung-Tae
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Kyungki-Do 449-900, Korea
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Kim Se-Hoon
CVD Division, COMTECS Co., Ltd., #9-1, Holim-Dong, Dalseo-Ku, Daegu 704-240, Korea
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Choi Gil-Heyun
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Kyungki-Do 449-900, Korea
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Moon Joo-Tae
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Kyungki-Do 449-900, Korea
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Jung Eun-Ji
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Kyungki-Do 449-900, Korea
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Bae Nam-Jin
CVD Division, COMTECS Co., Ltd., #9-1, Holim-Dong, Dalseo-Ku, Daegu 704-240, Korea
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Kim Hyun-Su
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Kyungki-Do 449-900, Korea
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Ryu Byung-Il
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Kyungki-Do 449-900, Korea
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Moon Kwang-Jin
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Kyungki-Do 449-900, Korea
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Jung Sug-Woo
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Kyungki-Do 449-900, Korea
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