Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Ru thin films were prepared by metalorganic chemical vapor deposition (MOCVD) using cyclopentadienyl-propylcyclopentadienlylruthenium(II) [RuCp(i-PrCp)] and the nucleation behaviors of Ru films on Ta2O5, TiN, Si3N4, SiO2, TiO2 substrates were investigated. It appeared that the difference in nucleation behaviors on various substrates is due to the bonding type between atoms in substrate materials. The nucleation property of Ru films on TiN was successfully improved by plasma treatment of the TiN substrate using Ar before film deposition. It was found that the Ar plasma treatment selectively removes N ions from the surface, makes the TiN surface more metallic or ionic (due to the residual Ti-O bonding), and reduces the nucleation barrier. In addition, the oxidation resistance of Ru/TiN layers was improved by H2 annealing, which made the Ru films more dense.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-15
著者
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Lim Han-jin
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Kim Sung-tae
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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KIM Beom
School of Materials Science and Engineering, Seoul National University
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Lee Kwanghee
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Yoo Cha-young
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Kang Sang
School Of Chemical Engineering College Of Engineering Seoul National University
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Hwang Cheol
School Of Mat. Sci. And Eng. Seoul National Univ
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Kim Jin
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Kim Hyeong
School Of Electrical And Electronics Engineering Chung-ang University
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Kim Sung-Tae
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi-do, 449-711, Korea
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Yoo Cha-Young
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi-do, 449-711, Korea
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Lim Han-Jin
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi-do, 449-711, Korea
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Lee Kwanghee
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi-do, 449-711, Korea
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Kim Jin
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi-do, 449-711, Korea
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Hwang Cheol
School of Materials Science and Engineering, Seoul National University, San #56-1, Shillim-dong, Kwanak-ku, Seoul 151-742, Korea
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Kim Hyeong
School of Materials Science and Engineering, Seoul National University, San #56-1, Shillim-dong, Kwanak-ku, Seoul 151-742, Korea
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