Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-30
著者
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Lim Han-jin
Semiconductor R&d Center Samsung Electronics Co.
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Lim Han-jin
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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YOO Cha-Young
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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KIM Sung-Tae
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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KIM Jin
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.
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LEE Kwanghee
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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Kim Sung-tae
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Lee Kwanghee
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Yoo Cha-young
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Hwang Cheol
School Of Materials Science And Engineering Seoul National University
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Kang Sang
School of Materials Science and Engineering, Seoul National University
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Kim Hyeong
School of Materials Science and Engineering, Seoul National University
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KIM Beom
School of Materials Science and Engineering, Seoul National University
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Yoo Chayoung
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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