A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
-
Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
-
Lee Moon
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team
-
Lee Sang
Samsung Electronics Co. Ltd. Gyunggi Kor
-
Lee Moon
Samsung Electronics Co. Semiconductor R & D Center Memory Process Development Team
-
Kim W
Samsung Electronics Co. Semiconductor R & D Center Memory Process Development Team
-
Lee M
Samsung Electronics Co. Ltd. Kyungki‐do Kor
-
Lee K
Etri Taejon Kor
-
Lee Ki
Samsung Electronics Co. Semiconductor R & D Center Memory Process Development Team
-
Kang Chang
Samsung Electronics Co. Semiconductor R & D Center Memory Process Development Team
-
Hwang Cheol
Semiconductor R&d Center Samsung Electronics Co.
-
Hwang Cheol
School Of Materials Science And Engineering Seoul National University
-
Lee S
Samsung Electronics Co. Ltd. Kyungki‐do Kor
-
Lee Sang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
-
Lee Byoung
Samsung Electronics, Co., Semiconductor R&D Center, Memory Process Development Team
-
Kim Wan
Samsung Electronics, Co., Semiconductor R&D Center, Memory Process Development Team
-
Horii Hideki
Samsung Electronics, Co., Semiconductor R&D Center, Memory Process Development Team
-
HWANG Cheol
SAMSUNG Electronics, Co., Semiconductor R&D Center, MPD Team
-
CHO Hag-Ju
SAMSUNG Electronics, Co., Semiconductor R&D Center, MPD Team
-
Lee K
Semiconductor R&d Center Samsung Electronics Co. Ltd
-
Lee S
Samsung Electronics Co. Ltd. Kyungki Kor
-
HORII Hideki
Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
-
Lee Moon
Semiconductor R&d Samsung Electronics Co. Ltd.
-
Cho Hag-ju
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
-
LEE Byoung
ASET EUV Laboratory
-
Kim Wan
Samsung Electronics Co. Semiconductor R & D Center Memory Process Development Team
-
Lee Byoung
Samsung Electronics Co. Semiconductor R & D Center Memory Process Development Team
-
Horii Hideki
Process Development Team Memory Division Samsung Electronics Co. Ltd.
-
Kang Chang
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2
-
Hwang Cheol
School of Material Science and Engineering, Seoul National University
-
Lee S.I.
Semiconductor R&D Division, Samsung Electronics Co., Ltd.
-
Lee Sang
Samsung Electro-Mechanics Co., Ltd., 314, Maetan-3-Dong, Paldal-Gu, Suwon-Si, Gyunggi-Do, 442-743, Republic of Korea
関連論文
- Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
- Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Heterogeneous Particle Formation during Low Pressure Etching of Silicon Dioxide
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
- Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
- Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
- A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
- Remote Plasma-Assisted Metal Organic Chemical Vapor Deposition of Tantalum Nitride Thin Films with Different Radicals
- Barrier Metal Properties of Amorphous Tantalum Nitride Thin Films between Platinum and Silicon deposited using Remote Plasma Metal Organic Chemical Vapor Method
- Simulated Performance of ArF Excimer Laser Lithography Optics
- Simulated Performance of ArF Excimer Laser Lithography Optics
- PE-453 Association of Microbubble Washout Time with Degree of Mitral Regurgitation(Echo/Doppler-7 (I) PE76,Poster Session (English),The 70th Anniversary Annual Scientific Meeting of the Japanese Circulation Society)
- PE-365 Effect of Different Conditioning on Perfluorocarbon-exposed Sonicated Dextrose Albumin(PESDA) Manufacture(Echo/Doppler-8 (I) PE61,Poster Session (English),The 70th Anniversary Annual Scientific Meeting of the Japanese Circulation Society)
- A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device
- A Novel and Low Thermal Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured HSQ (Hydrogen Silsesquioxane) in STC (Stacked Capacitor) DRAM
- Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP
- Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP
- Dielectric and Electromechanical Properties of Pb(Zr,Ti)O_3 Thin Films for Piezo-Microelectromechanical System Devices
- Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM
- Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes
- Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
- Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
- Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
- Atomic Layer Deposition - and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta_2O_5 and Al_2O_3 Metal Insulator Silicon Capacitor for 0.13μm Technology and Beyond
- Effects of Tegaserod on Ileal Peristalsis of Guinea Pig In Vitro
- Fabrication and Electrical Characterization of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications
- A 0.24μm PRAM Cell Technology Using N-Doped GeSbTe Films(Phase Change RAM)(New Era of Nonvolatile Memories)
- Enhancement of Mask Selectivity in SiO_2 Etching with a Phase-Controlled Pulsed Inductively Coupled Plasma
- Characteristics of a Stabilized Pulsed Plasma via Suppression of Side-Band Modes
- Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition
- Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition
- Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- Control of the Microstructure of (Pb, La) TiO_3 Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory
- Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors
- TaO_xN_y Gate Dielectric with Improved Thermal Stability
- PE-532 NT-proBNP Predicts Perioperative Cardiac Events in Patients Undergoing Noncardiac Surgery(Preventive medicine/Epidemiology/Education-3 (H) PE89,Poster Session (English),The 70th Anniversary Annual Scientific Meeting of the Japanese Circulation Soci
- Innovative Al Damascene Process for Nanoscale Interconnects
- Optimum TiSi_2 Ohmic Contact Process for Sub-100nm Devices
- Influence of La_Sr_CoO_3 Heterostructure Electrodes on Pb(Zr, Ti)O_3 Thin Film Properties
- Highly Manufacturable 90nm NOR Flash Multi-Level Cell Technology with WSi_x Gate
- Effect of SiO_2 Film Deposition on the Ferroelectric Properties of a Pt/Pb(Zr,Ti)O_3/Pt Capacitor
- Effect of ECR CVD SiO_2 Film Deposition of Ferroelectric Properties of Pt/PZT/Pt Capacitor
- Low Damage In Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma
- PE-052 Segmental Diastolic Functional Change due to Myocardial Ischemia and Its Persistence : 2D Strain Analysis(Echo/Doppler-07, The 71st Annual Scientific Meeting of the Japanese Circulation Society)
- Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer
- Effects of Encapsulating Barrier Layer on Ferroelectric Properties of Ir/IrO_2/PZT/Pt/IrO_2 Capacitor
- Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)
- Deposition and Electrical Characterization of Very Thin SrTiO_3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application
- Electrical Characterizations of Pt/(Ba,Sr)TiO_3/Pt Planar Capacitors for ULSI DRAM Applications
- Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition
- Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition
- Structural and Electrical Properties of Ba_Sr_TiO_3 Films on Ir and IrO_2 Electrodes
- Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering
- Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer : Surfaces, Interfaces, and Films
- Thermal Behavior along Depth of Extreme Ultraviolet Lithography Mask during Dry Etching : Surfaces, Interfaces, and Films
- Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask
- Investigation of Low-Frequency Noise Behavior of In_Al_As/In_Ga_As Metamorphic High Electron Mobility Transistors
- Low-frequency noise characteristics of In_Al_As/In_Ga_As metamorphic high electron mobility transistors
- Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)
- Effects of Step Coverage, Cl Content and Deposition Temperature in TiN Top Electrode on the Reliability of Ta_2O_5 and Al_2O_3 MIS Capacitor for 0.13μm Technology and Beyond
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr) TiO_3 Thin Films
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr) TiO_3 Thin Films
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr)TiO_3 Thin Films
- Design Considerations for Patterned Wafer Bonding
- Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition
- Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
- Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices
- Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
- Impact of In Situ NH3 Preannealing on Sub-100 nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Effect of Ca addition on Grain Size and Crystal Phase of Barium Titanate Nanopowders
- Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask