Horii Hideki | Process Development Team Memory Division Samsung Electronics Co. Ltd.

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Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
A 0.24μm PRAM Cell Technology Using N-Doped GeSbTe Films(Phase Change RAM)(New Era of Nonvolatile Memories)
Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)
Structural and Electrical Properties of Ba_Sr_TiO_3 Films on Ir and IrO_2 Electrodes
Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering

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