Atomic Layer Deposition - and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta_2O_5 and Al_2O_3 Metal Insulator Silicon Capacitor for 0.13μm Technology and Beyond

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2001-04-01

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Shape and Interband Transition Behavior of InAs Quantum Dots Dependent on Number of Stacking Cycles
Dependence of Buffer Layer on the Distribution of InAs Quantum Dots
Facet Evolution of Al_Ga_As/GaAs Multilayers Grown on Mesa-Patterned GaAs Substrate
Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP
Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP
Role of Insertion Layer Controlling Wavelength in InGaAs Quantum Dots
Effects of Doping Profile on Characteristics of InAs Quantum Dots
Atomic Layer Deposition - and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta_2O_5 and Al_2O_3 Metal Insulator Silicon Capacitor for 0.13μm Technology and Beyond
Effects of Tegaserod on Ileal Peristalsis of Guinea Pig In Vitro
Fabrication and Electrical Characterization of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications
Suppression of Edge Effects Based on Analytic Model for Leakage Current Reduction of Sub-40nm DRAM Device
Effect of SiO_2 Film Deposition on the Ferroelectric Properties of a Pt/Pb(Zr,Ti)O_3/Pt Capacitor
Effect of ECR CVD SiO_2 Film Deposition of Ferroelectric Properties of Pt/PZT/Pt Capacitor
Low Damage In Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma
Effects of Encapsulating Barrier Layer on Ferroelectric Properties of Ir/IrO_2/PZT/Pt/IrO_2 Capacitor
Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)
Electrical Characterizations of Pt/(Ba,Sr)TiO_3/Pt Planar Capacitors for ULSI DRAM Applications
Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition
Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition
Structural and Electrical Properties of Ba_Sr_TiO_3 Films on Ir and IrO_2 Electrodes
Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering
Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)
Effects of Step Coverage, Cl Content and Deposition Temperature in TiN Top Electrode on the Reliability of Ta_2O_5 and Al_2O_3 MIS Capacitor for 0.13μm Technology and Beyond
Improvement of Photo-Misalignment in Patterned Wafer Bonding Process for Silicon-on-Insulator Device
Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
Recent Progress in High-k Dielectric Films for ULSIs
Pattern Displacement Error under Off Axis Illumination
Generation of Multiple Energy Bandgaps Using a Gray Mask Process and Quantum Well Intermixing
Optimization of Sample Plan for Overlay and Alignment Accuracy Improvement
Design Considerations for Patterned Wafer Bonding
Atomic Layer Deposition- and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta2O5 and Al2O3 Metal Insulator Silicon Capacitor for 0.13 $\mu$m Technology and Beyond

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