Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-30
著者
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PARK Young
Semiconductor Materials Laboratory, Nano-device Research Center, Korea Institute of Science and Tech
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KIM Eun
Department of Phpysics, Hanyang University
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Kim E
Korea Inst. Sci. And Technol. Seoul Kor
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Min S‐k
Korea Univ. Chungnam Kor
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Min Suk-ki
School Of Electronics And Information Engineering Korea University
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Min Suk-ki
Semiconductor Mat. Lav.
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CHO Yong
Department of Physics, Pusan National University
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Kim E
Hanyang Univ. Seoul Kor
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Park Y
Korea Inst. Of Sci. And Technol. Seoul Kor
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Cho Y
Semiconductor Materials Laboratory Korea Institute Of Science And Technology:department Of Materials
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Park Y
Nano Device Research Center Korea Institute Of Science And Technology
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Koh Eui
Seoul Branch Korea Basic Science Institute
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Cho Yong
Department Of Chemical Engineering Korea Advanced Institute Of Science And Technology
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Byun Dongjin
Department Of Materials Science Korea University
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JHIN Junggeun
Department of Materials Science, Korea University
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KOH Eul
Seoul branch, Korea Basic Science institute
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KIM Gyeungho
Division of Materials, Korea Institute of Science and Technology
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Koh E
Seoul Branch Korea Basic Science Institute
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Kim Gyeungho
Division Of Materials Korea Institute Of Science And Technology
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Jhin Junggeun
Department Of Materials Science Korea University
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Park Young
Semiconductor Materials Laboratory Korea Institute Of Science And Technology:department Of Physics K
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Kim Eun
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Cho Yong
Department Of Chemical Engineering And Department Of Bionanotechnology Hanyang University
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Park Young
Semicondactor Materials Laboratory Korea Insrirute Of Science And Technology
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Byun Dongjin
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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KIM Eun
Department of Agricultural Biotechnology, Seoul National University
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