Deposition and Properties of Reactively Sputtered Ruthenium Dioxide Thin Films as an Electrode for Ferroelectric Capacitors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-12-30

著者

• Min Suk-ki

  Semiconductor Mat. Lav.

• Lee J‐g

  Korea Inst. Sci. And Technol. Seoul Kor

• LEE Jeong-gun

  Semiconductor Materials Research Center, Korea Institute of Science and Technology

• CHOH HoSung

  Department of Physics, Korea University

• Lee Jeong-gun

  Semiconductor Materials Research Center Korea Institute Of Science And Technology

• Choh Hosung

  Department Of Physics Korea University

関連論文

• Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
• Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
• Effects of NH_3 Plasma Treatment of the Substrate on Metal Organic Chemical Vapor Deposition of Copper Films
• Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
• Deposition and Properties of Reactively Sputtered Ruthenium Dioxide Thin Films as an Electrode for Ferroelectric Capacitors
• The Characteristics of Nitrogen Implanted Tungsten Film as a New Diffusion Barrier for Metal Organic Chemical Vapor Deposited Cu Metallization
• Current Vacuum Microelectronics Activities in Korea
• Highly Conductive Tungsten Thin Films Prepared by the Plasma-Assisted Silane Reduction Process
• Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
• Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
• Photoluminescence of MgGa_2Se_4 Single Crystals
• Deep Levels in Undoped and ErCl_3-Doped TlGaS_2 single Crystals
• Optical Properties of CuAlSe_2 Single Crystal
• Performance of the Plasma-Deposited Tungsten Nitride Diffusion Barrier for Al and Au Metallization

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