Current Vacuum Microelectronics Activities in Korea

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概要

• 論文の詳細を見る

• The 1st Korea-Japan Joint Vacuum Microelectronics Symposium was held in Seoul on July 9, 1993 in conjunction with the 5th Korean Vacuum Society Meeting. It was the predecessor of the 2nd Asian Vacuum Microelectronics Conference. It must be fortunate that the meeting has been extended to an Asia wide one. Ten invited speakers, five from each country presented talks at the Symposium. The Symposium was quite successful, and called intensive attention to the fields of vacuum microelectronics in Korea. The growing R & D activities, especially for the STM, AFM, FED, ELD, LCD and TFT technologies are noteworthy. A condiderable number of works have been reported at various academic meetings such as the Korean Vacuum Society Meeting, the Korean Semiconductor Conference, and group VME seminars. Recently, a new FEAD System developed and constructed by the J.D. Lee's Team of Seoul National University Semiconductor Research Center and Uni-Vacuum (Univac) was installed.

• 社団法人映像情報メディア学会の論文
• 1994-10-27

著者

• Min Suk-ki

  Semiconductor Mat. Lav.

• Min Suk-ki

  Semiconductor Materials Research Center Korea Institute Of Science And Technology

• Chung Choong

  Department Of Physics Yonsei University

• Park Tong

  Department of Physics, Kyungpook National University

• Park Tong

  Department Of Physics Kyungpook National University

• CHUNG Choong

  Department of Physics, Yonsei University

関連論文

• Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
• Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
• Effects of NH_3 Plasma Treatment of the Substrate on Metal Organic Chemical Vapor Deposition of Copper Films
• Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
• Deposition and Properties of Reactively Sputtered Ruthenium Dioxide Thin Films as an Electrode for Ferroelectric Capacitors
• The Characteristics of Nitrogen Implanted Tungsten Film as a New Diffusion Barrier for Metal Organic Chemical Vapor Deposited Cu Metallization
• Current Vacuum Microelectronics Activities in Korea
• Highly Conductive Tungsten Thin Films Prepared by the Plasma-Assisted Silane Reduction Process
• Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
• Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
• Photoluminescence of MgGa_2Se_4 Single Crystals
• Deep Levels in Undoped and ErCl_3-Doped TlGaS_2 single Crystals
• Optical Properties of CuAlSe_2 Single Crystal
• Performance of the Plasma-Deposited Tungsten Nitride Diffusion Barrier for Al and Au Metallization
• Distribution Coefficient of Ag in Bismuth Crystal

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