Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers

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概要

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• The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD) were investigated. Intentionally tensile strained sapphire substrates were prepared by the implantation of 2.4 MeV energy Cl+ and As+-ions with a $10^{15}$ cm-2 dose where the projection ranges ($R_{p}$) were 1.16 μm and 0.95 μm, respectively. It was found from Raman spectroscopy that the compressive stress normally existed in the GaN epilayer/sapphire was decreased by the use of a Cl+-ion-implanted sapphire substrate. The intentionally tensile strained sapphire surface can result in a superior crystalline GaN epilayer on top of it. However, excessively roughened and modified surface by As+-ions degraded the GaN epilayer. Not only the ionic radius but also the chemical species of implanted ions in sapphire affected the crystal quality of GaN epilayers. Therefore, we concluded that the properly tensile-strained sapphire (0001) substrate could improve the properties of GaN epilayers grown by MOCVD.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-15

著者

• Min Suk-ki

  School Of Electronics And Information Engineering Korea University

• Park Young

  Nano Device Research Center Korea Institute Of Science And Technology

• Kang Mingu

  Department Of Materials Science Korea University

• Koh Eui

  Seoul Branch Korea Basic Science Institute

• Moon Youngboo

  Lg Electronics Institute Of Technology

• Byun Dongjin

  Department Of Materials Science Korea University

• Jhin Junggeun

  Department Of Materials Science Korea University

• Kim Jaekyun

  Nano Device Research Center Korea Institute Of Science And Technology

• Park Young

  Nano Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea

• Min Suk-Ki

  School of Electronics and Information Engineering, Korea University, Seochang Campus, Chochiwon, Chungnam 339-700, Korea

• Byun Dongjin

  Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea

• Byun Dongjin

  Department of Materials Science, Korea University, 1, 5-Ka, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Korea

• Jhin Junggeun

  Department of Materials Science, Korea University, 1, 5-Ka, Anam-Dong, Sungbuk-Ku, Seoul 136-701, Korea

• Koh Eui

  Seoul Branch, Korea Basic Science Institute, Seoul 136-701, Korea

• Moon Youngboo

  LG Electronics Institute of Technology, 16 Woomyeon-Dong, Seocho-Ku, Seoul 137-724, Korea

• Kim Jaekyun

  Nano Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea

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