Effects of Rapid Thermal Annealing on the Structural and Optical Properties of InAs/GaAs Self-Assembled Quantum Dots
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
-
HYON Chan
Semiconductor Materials Laboratory, Nano-device Research Center, Korea Institute of Science and Tech
-
KIM Eun
Semiconductor Materials Research Center Korea Institute of Science and Technology
-
Min Suk-ki
School Of Electronics And Information Engineering Korea University
-
Hyon C
Korea Inst. Sci. And Technol. Seoul Kor
-
Hyon Chan
Semiconductor Materials Laboratory Korea Institute Of Science And Technology
-
Kim Eun
Semiconductor Materials Laboratory Korea Institute Of Science And Technology
-
CHO Shinho
Semiconductor Examination Division II, Korean Industrial Property Office
-
Cho Shinho
Semiconductor Examination Division Ii Korean Industrial Property Office
-
KIM Eun
Semiconductor Materials Laboratory, Korea Institute of Science and Technology
関連論文
- Shape and Interband Transition Behavior of InAs Quantum Dots Dependent on Number of Stacking Cycles
- Direct Transport Measurements through an Ensemble of INAS Self-assembled Quantum Dots
- Dependence of Buffer Layer on the Distribution of InAs Quantum Dots
- Facet Evolution of Al_Ga_As/GaAs Multilayers Grown on Mesa-Patterned GaAs Substrate
- Stress-Driven Formation of InGaAs Quantum Dots on GaAs with Sub-Micron Platinum Pattern
- Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
- Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
- Effects of NH_3 Plasma Treatment of the Substrate on Metal Organic Chemical Vapor Deposition of Copper Films
- Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
- Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope
- Effects of Rapid Thermal Annealing on the Structural and Optical Properties of InAs/GaAs Self-Assembled Quantum Dots
- Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
- Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- Luminescence from the Thermally Treated Cerium Oxide on Silicon
- Dependence of Buffer Layer on the Distribution of InAs Quantum Dots
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- Shape and Interband Transition Behavior of InAs Quantum Dots Dependent on Number of Stacking Cycles