Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-30

著者

• Min S‐k

  Korea Univ. Chungnam Kor

• Min Suk-ki

  School Of Electronics And Information Engineering Korea University

• Park Young

  Nano Device Research Center Korea Institute Of Science And Technology

• Kang Mingu

  Department Of Materials Science Korea University

• Park Y

  Nano Device Research Center Korea Institute Of Science And Technology

• KOH Eui

  Seoul Branch, Korea Basic Science Institute

• Moon Youngboo

  Lg Electronics Institute Of Technology

• Byun Dongjin

  Department Of Materials Science Korea University

• JHIN Junggeun

  Department of Materials Science, Korea University

• KIM Jaekyun

  Nano Device Research Center, Korea Institute of Science and Technology

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• Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
• Free Carrier Concentration Gradient along the c-Axis of a Freestanding Si-doped GaN Single Crystal
• Effects of Rapid Thermal Annealing on the Structural and Optical Properties of InAs/GaAs Self-Assembled Quantum Dots
• Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
• Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
• Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
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• In situ Monitoring of Target Voltage in Magnetron Reactive Sputtering of ZnO
• Structural Analysis on Photocatalytic Efficiency of TiO_2 by Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers

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