Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
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概要
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We discuss the physics and device applications with quasi-zero dimensional system provided by self-assembled quantum dots. Growth of quantum dots via atomic layer molecular beam epitixy and carrier dynamic in dot-in-a-well structures are investigated, and fabrication and characterization of devices such as laser diodes, superluminescent diodes, and infrared photodetectors are reported.
- 社団法人電子情報通信学会の論文
- 2005-06-23
著者
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Cho W
Nano-device Research Center Korea Institute Of Science And Technology
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Choi Won
Nano Device Research Center Kist
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Song J
Nano-device Research Center Korea Institute Of Science And Technology
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Lee J
Nano-device Research Center Korea Institute Of Science And Technology
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Park Young
Nano Device Research Center Korea Institute Of Science And Technology
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SONG Jin
Nano Device Research Center, Korea Institute of Science and Technology
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HAN Il
Nano Device Research Center, Korea Institute of Science and Technology
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LEE Jung
Nano Device Research Center, Korea Institute of Science and Technology
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Lee Jung
Nano Device Research Center Korea Institute Of Science And Technology
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Han Il
Nano Device Research Center Korea Institute Of Science And Technology
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Han Il
Nano Device Research Center Kist
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Song Jin
Nano Device Research Center Korea Institute Of Science And Technology
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Park Young
Nano Device Research Center, Korea Institute of Science and Technology
関連論文
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Enhanced Characteristics of In_Ga_As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment
- Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors
- Study of Chirped Quantum Dot Superluminescent Diodes
- Characteristics of Superluminescent Diodes Utilizing In_Ga_As Quantum Dots
- ED2000-83 / SDM2000-83 1/f noise in Schottky barrier structue
- ED2000-65 / SDM2000-65 Optical control of p-channel MODFET
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
- InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 μm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Characteristics of Superluminescent Diodes Utilizing In0.5Ga0.5As Quantum Dots