Enhanced Characteristics of In_<0.5>Ga_<0.5>As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment
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概要
- 論文の詳細を見る
Device characteristics of In0.5Ga0.5As/GaAs quantum dot infrared detector (QDIP) have been enhanced with hydrogen plasma treatment. After the hydrogen (H) plasma treatment, the dark currents were noticeably decreased and photoluminescence (PL) intensity was increased by H-passivation of interfacial traps between quantum dots and GaAs and of non-radiative defect centers caused during QD growths. Photo response, which could not be observed in as-grown QDIP due to large dark currents which obscured the photocurrent signal, was measured successfully after H-treatment due to H-passivation.
- （社）電子情報通信学会の論文
- 2008-05-01
著者
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Cho W
Nano-device Research Center Korea Institute Of Science And Technology
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Choi Won
Nano Device Research Center Kist
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Song J
Nano-device Research Center Korea Institute Of Science And Technology
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Lee J
Nano-device Research Center Korea Institute Of Science And Technology
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SONG Jin
Nano Device Research Center, Korea Institute of Science and Technology
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LEE Jung
Nano Device Research Center, Korea Institute of Science and Technology
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Lee Jung
Nano Device Research Center Korea Institute Of Science And Technology
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Song Jin
Nano Device Research Center Korea Institute Of Science And Technology
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Hwang Sung
R&d Center Samsung Electronics Co. Ltd.
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HWANG Sung
R&D Center, Samsung Electronics Co., Ltd.
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