Characteristics of Superluminescent Diodes Utilizing In0.5Ga0.5As Quantum Dots
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概要
- 論文の詳細を見る
Superluminescent diodes (SLDs) using an In0.5Ga0.5As quantum dot (QD) were fabricated. The In0.5Ga0.5As QDs were formed by a five-period superlattice of InAs (1 monolayer) and GaAs (1 monolayer). The QDs were three-stacked with the 40-nm-thick GaAs barrier layer and the total dot density was $5\times 10^{10}$ cm-2. The output power and spectral width of the SLD using these three-stacked QDs are 0.9 W and 80 nm, covering the range from 980 to 1060 nm, respectively.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-08-15
著者
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Choi Won
Nano Device Research Center Kist
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Lee Jung
Nano Device Research Center Korea Institute Of Science And Technology
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Han Il
Nano Device Research Center Kist
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DONG Song
Nano Device Research Center, Korea Institute of Science and Technology
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Heo Du
Department Of Electronics Engineering Korea University
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Jeong Ji
Department Of Pharmacology College Of Medicine Chung-ang University
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Lee Jung
Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
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Choi Won
Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
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Jeong Ji
Department of Radio Engineering, Korea University, Seoul 136-701, Korea
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Han Il
Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
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Heo Du
Department of Electronics Engineering, Korea University, Seoul 136-701, Korea
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Jeong Ji
Department of Pathology, Kyungpook National University Medical Center, 474 Hakjeongdong, Buk-gu, Daegu 702-210, Republic of Korea
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