Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector

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概要

• 論文の詳細を見る

• We investigated the device performances for a post-growth thermally treated In0.5Ga0.5As/GaAs quantum-dot infrared detector (QDIP). Device characteristics, such as dark current, photoluminescence (PL), and photocurrent spectra, have been studied and compared for the as-grown and thermally treated QDIPs. After the thermal treatment with a SiO2 capping layer, the dark current was increased, the PL peak position was blue-shifted, and the detection wavelength was redshifted due to In/Ga interdiffusion in the quantum dot (QD) structure. Furthermore, the activation energies estimated from the integrated PL intensities agreed well with the peak positions of the photocurrent spectra.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-07-15

著者

• Choi Won

  Nano Device Research Center Kist

• HWANG Sung

  Nano Device Research Center, KIST

• SHIN Jae

  Nano Device Research Center, KIST

• LEE Seung-Woong

  QSRC, Dongguk University

• Lee Jung

  Nano Device Research Center Korea Institute Of Science And Technology

• Song Jin

  Nano Device Research Center Korea Institute Of Science And Technology

• Han Haewook

  Nano-terahz Photonics Lab Postech

• Lee Jung

  Nano Device Research Center, KIST, P.O.Box 131, Cheongryang, Seoul 130-650, Korea

• Choi Won

  Nano Device Research Center, KIST, P.O.Box 131, Cheongryang, Seoul 130-650, Korea

• Song Jin

  Nano Device Research Center, KIST, P.O.Box 131, Cheongryang, Seoul 130-650, Korea

• Hwang Sung

  Nano Device Research Center, KIST, P.O.Box 131, Cheongryang, Seoul 130-650, Korea

• Han Haewook

  Nano-TeraHz Photonics lab, POSTECH, Pohang, Kyungbuk 790-784, Korea

• Lee Seung-Woong

  QSRC, Dongguk University, Jung-Ku, Seoul 100-715, Korea

関連論文

• Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
• Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
• Enhanced Characteristics of In_Ga_As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment
• Study of Chirped Quantum Dot Superluminescent Diodes
• Characteristics of Superluminescent Diodes Utilizing In_Ga_As Quantum Dots
• Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
• Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
• Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
• InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 μm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy
• Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
• Characteristics of Superluminescent Diodes Utilizing In0.5Ga0.5As Quantum Dots
• Enhancement of Barrier Properties Using Ultrathin Hybrid Passivation Layer for Organic Light Emitting Diodes

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