Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-30
著者
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Lee Soojin
Nano Device Research Center Korea Institute Of Science And Technology
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Cho W
Nano-device Research Center Korea Institute Of Science And Technology
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Choi Won
Nano Device Research Center Kist
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Song J
Nano-device Research Center Korea Institute Of Science And Technology
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Lee J
Nano-device Research Center Korea Institute Of Science And Technology
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SONG Jin
Nano Device Research Center, Korea Institute of Science and Technology
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LEE Jung
Nano Device Research Center, Korea Institute of Science and Technology
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HWANG Sung
Nano Device Research Center, KIST
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SHIN Jae
Nano Device Research Center, KIST
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HAN Haewook
Nano-TeraHz Photonics lab, POSTECH
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LEE Seung-Woong
QSRC, Dongguk University
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Hwang Sung
R&d Center Samsung Electronics Co. Ltd.
関連論文
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Enhanced Characteristics of In_Ga_As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment
- Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors
- Study of Chirped Quantum Dot Superluminescent Diodes
- Characteristics of Superluminescent Diodes Utilizing In_Ga_As Quantum Dots
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser
- Photoluminescence Analysis of White-Light-Emitting Si Nanoparticles Using Effective Mass Approximation Method
- Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
- InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 μm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Characteristics of Superluminescent Diodes Utilizing In0.5Ga0.5As Quantum Dots
- Enhancement of Barrier Properties Using Ultrathin Hybrid Passivation Layer for Organic Light Emitting Diodes