Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices

概要

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Electrical low frequency excess noise or 1/f noise measurements provide strong means to diagnose the quality and reliability of the devices in semiconductor devices. However the exact nature of the noise sources are not clearly understood yet. In this report we present a new model for low frequency noise in semiconductor heterostructure devices such as MODFET's and semiconductor heterostructure laser diodes. Mobility fluctuation model and number fluctuation model including fluctuation mechanisms such as thermal activation, tunneling and random walk involving bulk traps and interface traps at the heterojunction interface, are critically scrutinized. Expressions for the current noise spectral power densities originated from the noise sources located alongside and/or across the current path are derived. We show how to determine the amount and exact location of the noise sources in space and/or in energy. Experimental results are examined with the model.
社団法人電子情報通信学会の論文
2002-06-25