Analytic Model for the Gate Current of MODFET's with and without Photonic Control
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概要
- 論文の詳細を見る
Understanding physical mechanisms of photonic response in microwave devices such as MODEFT 's is important in implementing high speed radio-on-fiber systems. We considered the gate current path as two Schottky diodes connected back-to-back where the gate metal plate and the barrier semiconductor layer constitutes the first Schottky diode and the barrier semiconductor layer and the two-dimensional electron (hole) gas formed in the channel constitutes the second Schottky diode. An analytic expression for the gate current in terms of the barrier heights of the two Schottky diodes is derived. When the photonic illumination generates the photocarries in the channel, the barrier heights are modified via the change in the Fermi level. This also explains the shift of the threshold voltage with the photonic illumination. The result shows rather linear relation between the gate current and the photonic illumination intensity under certain conditions.
- 社団法人電子情報通信学会の論文
- 2002-06-25
著者
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Kim Dong
School Of Electrical And Electronic Engineering Chung-ang Univ.
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Zimmermann Jacques
Imep Cnrs_inpg
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HAN Ilki
Nano Device Research Center, Korea Institute of Science and Technology
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Lee Jungil
Nano Device Research Center, Korea Institute of Science and Technology
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Choi Won-june
Nano Device Research Center Kist
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Kim D
School Of Electrical Engineering Kookmin University
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Han Ilki
Nano Device Research Center Kist
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Kim Dong
Department Of Electronics Engineering Kookmin University
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Lee Jungil
Nano Device Research Center Kist
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Kim Dong
School Of Electrical And Electronic Engineering At Yonsei University
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KIM Hwe-Jong
Nano Device research Center, KIST
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ZIMMERMANN Jacques
IMEP, CNRS_INPG
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Kim Hwe-jong
Nano Device Research Center Kist
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Han Ilki
School of Electrical Engineering, Kookmin University
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