Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization
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概要
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This paper reports the crystallization of amorphous InGaZnO (a-IGZO) films using solid-phase crystallization and discusses the mechanisms responsible for degradation of device performance after crystallization. The field-effect mobility (\mu_{\text{FE}}) and subthreshold gate swing (S) value of the nanocrystallite embedded-IGZO thin-film transistors (TFTs) were significantly degraded to 3.12 cm2 V-1 s-1 and 1.26 V/decade, respectively, compared to those (13.72 cm2 V-1 s-1 and 0.38 V/decade) for the a-IGZO TFTs. The decreased \mu_{\text{FE}} is explained based on indium deficiency by diffusion of its atoms in the channel layer and grain-boundary trapping of mobile carriers. The predominant mechanism of increasing S value has been attributed to increased interface and grain-boundary trapping.
- 2012-01-25
著者
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Lee Seung
School Of Advanced Materials Engineering Chonbuk National University
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Park Jin-seong
Department Of Advanced Materials Engineering Chosun University
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Kim Dong
School Of Electrical And Electronic Engineering At Yonsei University
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Kim Hyun
School of Advanced Materials Science and Engineering, Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Republic of Korea
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Lee Seung
School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea
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Ahn Byung
LCD Business, Samsung Electronics, Yongin, Gyeonggi 446-711, Korea
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Kim Gun
School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea
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Kim Gun
School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemoon-gu, Seoul 120-749, Korea
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Park Jin-Seong
Department of Material Science and Engineering, Dankook University, Cheonan, Chungnam 330-714, Korea
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Shin Hyun
School of Chemical Engineering and Materials Science, Chung-Ang University, 221 Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea
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Kim Dong
School of Clinical Sciences, University of Bristol
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