Enhancement of Light Output Power and Modification of Beam Profile in InGaN/GaN Light Emitting Diodes with Micro Polygon Column Shaped Transparent
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概要
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We report on the fabrication of GaN-based light-emitting diodes (LEDs) with micro-polygon columns (MPC) obtained by selective area growth (SAG) using the technique of metal organic chemical vapor deposition (MOCVD). The SAG makes it possible to control the density, size and position of the micro polygon columns. The facet structure consists of a polygon column covered with $\{11\bar{0}1\}$ facets. Columns with rough occur on the (0001) surface. The light output power of the MPC-LED was 53% higher than conventional LED. In addition, the light extraction efficiency of InGaN/GaN LEDs is significantly improved owing to the photon path length is shorter. It is possible to modify the beam profile via shaped transparent layer. Thus, this structure can provide photons with multiple chances of escaping from the LEDs surfaces.
- 2010-11-25
著者
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Lee Mi
School Of Electrical And Electronics Engineering Chung-ang University
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Kim Hyun
School Of Civil Environmental And Architectural Engineering Korea University
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Kim Hyung
School Of Biomedical Engineering College Of Biomedical And Health Science Research Institute Of Biom
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Kim Hee
School Of Animal Bioscience & Technology Konkuk University
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Lee Mi
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Kang Ji
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Ryu Jae
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Uthirakumar Periyayya
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Hong Chang-Hee
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Hong Chang-Hee
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Kang Ji
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Kim Hyung
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Kim Hyun
School of Advanced Materials Science and Engineering, Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Republic of Korea
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Kim Hee
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Kim Hyun
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Ryu Jae
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Uthirakumar Periyayya
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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