Effect of Ridge Growth on Wafer Bowing and Light Extraction Efficiency of Vertical GaN-Based Light-Emitting Diodes
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概要
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In this paper we report on the selective area growth (SAG) of vertical GaN-based light-emitting diodes (LEDs) by low-pressure metal-organic chemical vapor deposition (MOCVD). SAG, under optimized growth conditions, leads to ridge-shaped epilayers with a smooth top surface, devoid of any surface defect structures. The final ridge-shaped vertical LED structures, after the removal of the sapphire substrate by laser lift-off (LLO), exhibit a smaller bowing effect than conventional vertical LED structures. The suppression of lateral strain in the epilayers is responsible for the smaller bowing effect because of the reduction in lateral dimensions. Consequently, the use of SAG LEDs can achieve a 21% higher light output power than conventional vertical LEDs, indicating a significant improvement in light extraction efficiency due to the light guiding pathways offered by the ridge-shaped geometry of the LED structures.
- 2010-07-25
著者
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Kim Hyun
School Of Civil Environmental And Architectural Engineering Korea University
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Kim Hyung
School Of Biomedical Engineering College Of Biomedical And Health Science Research Institute Of Biom
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Kim Hee
School Of Animal Bioscience & Technology Konkuk University
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Kang Ji
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Ryu Jae
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Uthirakumar Periyayya
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Hong Chang-Hee
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Chandramohan S.
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Han Nam
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Suh Eun
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Cho Hyun
Advanced Technology Laboratory, LED R&D Center, LG Innotek, Seoul 137-724, Korea
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Song Hyun
Advanced Technology Laboratory, LED R&D Center, LG Innotek, Seoul 137-724, Korea
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Kwon Ho-Ki
Advanced Technology Laboratory, LED R&D Center, LG Innotek, Seoul 137-724, Korea
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Kang Ji
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Kim Hyun
School of Advanced Materials Science and Engineering, Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Republic of Korea
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Cho Hyun
Advanced Technology Laboratory, LED R&D Center, LG Innotek, Seoul 137-724, Korea
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Kim Hee
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Ryu Jae
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Kwon Ho-Ki
Advanced Technology Laboratory, LED R&D Center, LG Innotek, Seoul 137-724, Korea
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Uthirakumar Periyayya
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Song Hyun
Advanced Technology Laboratory, LED R&D Center, LG Innotek, Seoul 137-724, Korea
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