Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy

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概要

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• We characterized the energy band of an In-rich InGaN/GaN quantum dot (QD) system with a metal-insulator-semiconductor (MIS) structure by performing optical and electrical measurements. We found several electron traps that have the activation energies of 0.16, 0.40, 0.61, and 0.73 eV with the emission cross sections of $2.16\times 10^{-19}$, $2.23\times 10^{-16}$, $8.61\times 10^{-15}$ and $3.04\times 10^{-16}$ cm2, respectively. The origins of the traps were considered to be an N-vacancy, a QD state, an anti-site point defect and an interface state of the MIS structure. The bound state of QDs was determined to be 0.40 eV from the edge of the GaN barrier and had a capture barrier of 0.16 eV generated by strain between the InGaN and GaN materials.

• 2005-07-15

著者

• Kwon Soon-yong

  School Of Materials Science And Engineering Seoul National University

• Kim Jin

  Department Of Anatomy And Cell Biology College Of Veterinary Medicine And Bk21 Program For Veterinar

• Yoon Euijoon

  School Of Electronic And Electrical Engineering Kyungpook National University

• Kim Eun

  Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University

• Kim Hee

  School Of Animal Bioscience & Technology Konkuk University

• Kim Hee

  School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea

• Kwon Soon-Yong

  School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea

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